Numéro d'article FCP220N80 Les catégories MOSFET RoHS Fiche technique FCP220N80 La description MOSFET 800V 23A N-Channel SuperFET II MOSFET
Les catégories MOSFET Channel Mode Enhancement Configuration Single Fall Time 2.6 ns Height 16.3 mm Id - Continuous Drain Current 23 A Length 10.67 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 278 W Product Type MOSFET Qg - Gate Charge 78 nC Rds On - Drain-Source Resistance 220 mOhms Rise Time 19 ns Series FCP220N80 Technology SI Tradename SuperFET II Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 27 ns Unit Weight Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 4.7 mm